Impact of recombination on heavy ion induced single event upset cross-section

نویسندگان

  • K S Zemtsov
  • A M Galimov
چکیده

The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET.

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تاریخ انتشار 2016